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| CR3PM-12 Thyristor Low Power Use REJ03G0357-0200 Rev.2.00 Mar.01.2005 Features * * * * IT (AV) : 3 A VDRM : 600 V IGT : 100 A Viso : 1500 V * Insulated Type * Glass Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 Outline PRSS0003AA-A (Package name: TO-220F) 2 3 1 1. Cathode 2. Anode 3. Gate 12 3 Applications TV sets, control of household equipment such as electric blanket, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Rev.2.00, Mar.01.2005, page 1 of 7 CR3PM-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Isolation voltage Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Viso Ratings 4.7 3.0 70 24.5 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 2.0 1500 Unit A A A A2s W W V V A C C g V Conditions Commercial frequency, sine half wave 180 conduction, Tc = 103C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, each terminal to case Notes: 1. With gate to cathode resistance RGK = 220 . Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Symbol IRRM IDRM VTM VGT VGD Min. -- -- -- -- 0.1 Typ. -- -- -- -- -- Max. 2.0 2.0 1.6 0.8 -- Unit mA mA V V V Test conditions Tj = 125C, VRRM applied, RGK = 220 Tj = 125C, VDRM applied, RGK = 220 Tc = 25C, ITM = 10 A, instantaneous value Tj = 25C, VD = 6 V, IT = 0.1 A Tj = 125C, VD = 1/2 VDRM RGK = 220 Tj = 25C, VD = 6 V, IT = 0.1 A Junction to caseNote2 Gate trigger current IGT 1 -- 100Note3 A Thermal resistance Rth (j-c) -- -- 4.1 C/W Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 3. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 220 resistance between the gate and cathode. Rev.2.00, Mar.01.2005, page 2 of 7 CR3PM-12 Performance Curves Maximum On-State Characteristics 102 7 Tc = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 VFGM = 6V PGM = 0.5W Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 102 7 5 3 2 x 100 (%) Gate Characteristics Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 #2 #1 Typical Example IGT (25C) # 1 45A # 2 18A PG(AV) = 0.1W VGT = 0.8V IGT = 100A (Tj = 25C) IFGM = 0.3A 10-1 7 VGD = 0.1V 5 5 710-1 2 3 5 710 0 2 3 5 710 1 2 3 5 710 2 2 3 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to case) Gate Trigger Voltage (V) Distribution Typical Example 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 Transient Thermal Impedance (C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Junction Temperature (C) Time (s) Rev.2.00, Mar.01.2005, page 3 of 7 CR3PM-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 8 Average Power Dissipation (W) 180 6 5 4 3 2 1 0 0 1.0 2.0 Case Temperature (C) 7 140 120 100 80 60 40 20 0 0 1.0 2.0 3.0 360 Resistive, inductive loads = 30 60 90 180 120 90 = 30 60 360 Resistive, inductive loads 3.0 4.0 5.0 120 4.0 5.0 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) 8 Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 Average Power Dissipation (W) Resistive, inductive loads Natural convection 360 7 6 5 4 3 2 1 0 0 1.0 2.0 3.0 180 120 90 = 30 60 = 180 120 90 60 30 360 Resistive loads 4.0 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 160 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 120 100 80 60 40 Ambient Temperature (C) Case Temperature (C) 140 140 120 100 80 60 40 = 30 60 90 120 180 = 180 120 90 60 30 360 360 20 Resistive loads 0 0 1.0 2.0 3.0 4.0 5.0 20 Resistive loads Natural convection 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Average On-State Current (A) Rev.2.00, Mar.01.2005, page 4 of 7 CR3PM-12 Breakover Voltage vs. Junction Temperature Holding Current vs. Junction Temperature 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 -40 -20 0 20 40 60 80 100 120 140 160 x 100 (%) 160 Typical Example 140 RGK = 220 VD = 12V RGK = 1k Distribution Typical Example Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Holding Current (mA) Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Turn-On Time vs. Gate Current 101 7 5 4 3 2 100 7 5 4 3 2 10-1 0 10 # x 100 (%) 400 350 300 250 Holding Current (RGK = rk) Holding Current (RGK = 1k) #1 #2 200 150 100 50 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Turn-On Time (s) Typical Example IGT(25C) #1 25A #2 50A VD = 100V Ta = 25C Typical Example IGT (25C) # 33A 2 3 4 5 7 101 2 3 4 5 7 102 Gate to Cathode Resistance (k) Gate Current (mA) 80 x 100 (%) Turn-Off Time vs. Junction Temperature IT = 2A 70 VD = 50V VR = 50V 60 dv/dt = 5V/s 50 40 30 20 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Typical Example Distribution 10 0 0 20 40 60 80 100 120 140 160 Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Typical Example Turn-Off Time (s) Junction Temperature (C) Junction Temperature (C) Rev.2.00, Mar.01.2005, page 5 of 7 CR3PM-12 Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) 104 7 5 3 2 103 7 5 3 2 Typical Example tw 0.1s Gate Trigger Current (tw) Gate Trigger Current (DC) 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Current Pulse Width (s) Rev.2.00, Mar.01.2005, page 6 of 7 CR3PM-12 Package Dimensions JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Package Name TO-220F MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 10.5Max 5.2 2.8 1.2 5.0 8.5 5.0 1.2 17 3.2 0.2 17 3.2 0.2 3.6 13.5Min 13.5Min 3.6 1.3Max 1.3Max 0.8 0.8 2.54 2.54 0.5 2.6 2.54 2.54 8.5 0.5 2.6 4.5 Note: It applies to BCR2PM-12 Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR3PM-12 CR3PM-12-A8 Straight type Vinyl sack 100 Type name Lead form Tube 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 4.5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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